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EL5421C
EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
Features
* * * * 12MHz -3dB Bandwidth Unity gain buffer Supply voltage = 4.5V to 16.5V Low supply current (per buffer) = 500A * High slew rate = 10V/s * Rail to Rail operation * "Mini" SO Package (MSOP)
General Description
The EL5421C is a quad, low power, high voltage rail-to-rail input-output buffer. Operating on supplies ranging from 5V to 15V, while consuming only 500A per channel, the EL5421C has a bandwidth of 12MHz (-3dB). The EL5421C also provides rail-to-rail input and output ability, giving the maximum dynamic range at any supply voltage. The EL5421C also features fast slewing and settling times, as well as a high output drive capability of 30mA (sink and source). These features make the EL5421C ideal for use as voltage reference buffers in Thin Film Transistor Liquid Crystal Displays (TFT-LCD). Other applications include battery power, portable devices and anywhere low power consumption is important. The EL5421C is available in a space saving 10-Pin MSOP package and operates over a temperature range of -40C to +85C.
Applications
* * * * * * * * * * TFT-LCD Drive Circuits Electronics Notebooks Electronics Games Personal Communication Devices Personal Digital Assistants (PDA) Portable Instrumentation Wireless LANs Office Automation Active Filters ADC/DAC Buffer
Connection Diagram
Ordering Information
Part No. EL5421CY Temp. Range -40C to +85C Package 10-Pin MSOP Outline # MDP0043
VOUTA VINA VS+ VINB VOUTB
1 2 3 4 5
10 9 8 7 6 EL 5421C (MSOP 10)
VOUTD VIND VSVINC VOUTC
October 2, 2000
(c) 2000 Elantec Semiconductor, Inc.
EL5421C
EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
Absolute Maximum Ratings (T
A
= 25C)
Values beyond absolute maximum ratings can cause the device to be prematurely damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied +18V Supply Voltage between VS+ and VSInput Voltage VS- - 0.5V, VS+ +0.5V Maximum Continuous Output Current 30mA
Maximum Die Temperature Storage Temperature Operating Temperature Power Dissipation ESD Voltage
+125C -65C to +150C -40C to +85C See Curves 2kV
Important Note: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Characteristics
VS+ = +5V, VS- = -5V, RL = 10k and CL = 10pF to 0V, TA = 25C unless otherwise specified. Parameter Input Characteristics VOS TCVOS IB RIN CIN AV VOL VOH ISC PSRR IS SR tS BW CS Input Offset Voltage Average Offset Voltage Drift Input Bias Current Input Impedance Input Capacitance Voltage Gain Output Swing Low Output Swing High Short Circuit Current Power Supply Rejection Ratio Supply Current (Per Buffer) Slew Rate [3] Settling to +0.1% -3dB Bandwidth Channel Separation -4.5V VOUT 4.5V IL = -5mA IL = 5mA Short to GND [2] VS is moved from 2.25V to 7.75V No Load -4.0V VOUT 4.0V, 20% to 80% VO = 2V Step RL = 10k, CL = 10pF f = 5MHz 7 4.85 80 60 0.995 -4.92 4.92 120 80 500 10 500 12 75 750 VCM = 0V
[1]
Description
Condition
Min
Typ
Max
Unit
2 5 2 1 1.35
12 50
mV V/C nA G pF
VCM = 0V
1.005 -4.85
V/V V V mA dB A V/s ns MHz dB
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over the operating temperature range 2. Parameter is guaranteed (but not test) by design and characterization data 3. Slew rate is measured on rising and falling edges
2
EL5421C
EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
Electrical Characteristics
VS+ = +5V, VS- = 0V, RL = 10k and CL = 10pF to 2.5V, TA = 25C unless otherwise specified. Parameter Input Characteristics VOS TCVOS IB RIN CIN AV VOL VOH ISC PSRR IS SR tS BW CS Input Offset Voltage Average Offset Voltage Drift Input Bias Current Input Impedance Input Capacitance Voltage Gain Output Swing Low Output Swing High Short Circuit Current 0.5 VOUT 4.5V IL = -5mA IL = 5mA Short to GND [2] 4.85 80 0.995 80 4.92 120 VCM = 2.5V
[1]
Description
Condition
Min
Typ 2 5 2 1 1.35
Max 10
Unit mV V/C
VCM = 2.5V
50
nA G pF
1.005 150
V/V mV V mA
Output Characteristics
Power Supply Performance Power Supply Rejection Ratio Supply Current (Per Buffer) Slew Rate [3] Settling to +0.1% -3dB Bandwidth Channel Separation VS is moved from 4.5V to 15.5V No Load 1V VOUT 4V, 20% to 80% VO = 2V Step RL = 10 k, CL = 10pF f = 5MHz 60 80 500 750 dB A
Dynamic Performance 7 10 500 12 75 V/s ns MHz dB
1. Measured over the operating temperature range 2. Parameter is guaranteed (but not test) by design and characterization data 3. Slew rate is measured on rising and falling edges
3
EL5421C
EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
Electrical Characteristics
VS+ = +15V, VS- = 0V, RL = 10k and CL = 10pF to 7.5V, TA = 25C unless otherwise specified. Parameter Input Characteristics VOS TCVOS IB RIN CIN AV VOL VOH ISC PSRR IS SR tS BW CS Input Offset Voltage Average Offset Voltage Drift Input Bias Current Input Impedance Input Capacitance Voltage Gain Output Swing Low Output Swing High Short Circuit Current 0.5 VOUT 14.5V IL = -5mA IL = 5mA Short to GND [2] 14.85 80 0.995 80 14.92 120 VCM = 7.5V
[1]
Description
Condition
Min
Typ 2 5 2 1 1.35
Max 14
Unit mV V/C
VCM= 7.5V
50
nA G pF
1.005 150
V/V mV V mA
Output Characteristics
Power Supply Performance Power Supply Rejection Ratio Supply Current (Per Buffer) Slew Rate [3] Settling to +0.1% -3dB Bandwidth Channel Separation VS is moved from 4.5V to 15.5V No Load 1V VOUT 14V, 20% to 80% VO = 2V Step RL = 10 k, CL = 10pF f = 5MHz 60 80 500 750 dB A
Dynamic Performance 7 10 500 12 75 V/s ns MHz dB
1. Measured over the operating temperature range 2. Parameter is guaranteed (but not test) by design and characterization data 3. Slew rate is measured on rising and falling edges
4
EL5421C
EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
Typical Performance Curves
Input Offset Voltage Distribution 1800 1600 1400 Quantity (Buffers) 1200 1000 800 600 400 200 0 -12 -10 10 12 -8 -6 -4 -2 -0 2 4 6 8 Input Offset Voltage (mV) Input Offset Voltage vs Temperature 10 VS=5V Input Offset Voltage (mV) 5 Input Bias Current (nA) 2.0 VS=5V 10 0 11 13 15 17 19 Input Offset Voltage Drift, TCVOS( V/C) Input Bias Current vs Temperature 21 150 150 1 3 5 7 9 VS=5V TA=25C Typical Production Distribution Quantity (Buffers) 70 VS=5V 60 50 40 30 20 Typical Production Distribution Input Offset Voltage Drift
0.0
0
-5
-2.0 -50 0 50 Temperature (C) Output High Voltage vs Temperature 100 150 -50 0 50 Temperature (C) 100
Output Low Voltage vs Temperature -4.91 -4.92 Output Low Voltage (V) -4.93 -4.94 -4.95 -4.96
4.97
Output High Voltage (V)
4.96
VS=5V IOUT=5mA
VS=5V IOUT=-5mA
4.95
4.94
4.93 -50 0 50 Temperature (C) 100 150
-4.97 -50 0 50 Temperature (C) 100
5
EL5421C
EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
Voltage Gain vs Temperature 10.40 1.0005 VS=5V Voltage Gain (V/V) Slew Rate (V/ S) 10.35
Slew Rate vs Temperature
VS=5V
1.0000
10.30
0.9995 10.25
-50
0
50 Temperature (C)
100
150
-50
0
50 Temperature (C)
100
150
Supply Current per Channel vs Temperature Supply Current per Channel vs Supply Voltage 700 0.55 Supply Current (mA) VS=5V 600 Supply Current ( A) TA=25C
0.5
500
400 0.45 -50 0 50 Temperature (C) 100 150 300 0 5 10 Supply Voltage (V) 15 20
Frequency Response for Various RL 5 10k Magnitude (Normalized) (dB) 0 1k CL=10pF VS=5V 560 150 Magnitude (Normalized) (dB) 20
Frequency Response for Various CL
10
RL=10k VS=5V 12pF
0 50pF -10 100pF
-5
-10
-20 1000pF
-15 100k
1M Frequency (Hz)
10M
100M
-30 100k
1M Frequency (Hz)
10M
100M
6
EL5421C
EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
Output Impedance vs Frequency 200 12 160 Output Impedance () VS=5V TA=25C Maximum Output Swing (VP-P) 10 8 6 4 2 0 10k 100k Frequency (Hz) 1M 10M 0 10k 100k Frequency (Hz) 1M 10M VS=5V TA=25C RL=10k CL=12pF Distortion <1% Maximum Output Swing vs Frequency
120
80
40
PSRR vs Frequency 80 PSRR+ PSRRVoltage Noise (nVHz) 100 600
Input Voltage Noise Spectral Density vs Frequency
60 PSRR (dB)
40
20
VS= 5V
1k 10k 100k 1M 10M
10
0 100
Frequency (Hz)
1 100
1k
10k
100k Frequency (Hz)
1M
10M
100M
Total Harmonic Distortion + Noise vs Frequency 0.010 0.009 0.008 0.007 THD+ N (%) 0.006 0.005 0.004 0.003 0.002 0.001 1k 10k Frequency (Hz) 100k -140 VS=5V RL=10k VIN=1VRMS X-Talk (dB) -100 -80 -60
Channel Separation vs Frequency Response Dual measured Channel A to B Quad measured Channel A to D or B to C Other combinations yield improved rejection. VS=5V RL=10k VIN=220mVRMS
-120
1k
10k
100k Frequency (Hz)
1M
6M
7
EL5421C
EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
Small-Signal Overshoot vs Load Capacitance Settling Time vs Step Size 90 VS=5V RL=10k VIN=50mV TA=25C Step Size (V) 4 3 2 1 0 -1 -2 10 10 100 Load Capacitance (pF) 1000 0 200 400 Settling Time (nS) Large Signal Transient Response Small Signal Transient Response 600 800 -3 -4 0.1% VS=5V RL=10k CL=12pF TA=25C
70 Overshoot (%)
0.1%
50
30
1V
1 S
50mV
200nS VS=5V TA=25C RL=10k CL=12pF
VS=5V TA=25C RL=10k CL=12pF
8
EL5421C
EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
Pin Description
EL5421C 1 Name VOUTA Buffer A Output
VS+
Function
Equivalent Circuit
VSGND Circuit 1
2
VINA
Buffer A Input
VS+
VSCircuit 2
3 4 5 6 7 8 9 10
VS+ VINB VOUTB VOUTC VINC VSVIND VOUTD
Positive Power Supply Buffer B Input Buffer B Output Buffer C Output Buffer C Input Negative Power Supply Buffer D Input Buffer D Output (Reference Circuit 2) (Reference Circuit 1) (Reference Circuit 1) (Reference Circuit 2) (Reference Circuit 2) (Reference Circuit 1)
9
EL5421C
EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
Applications Information
Product Description
The EL5421C unity gain buffer is fabricated using a high voltage CMOS process. It exhibits Rail-to-Rail input and output capability, and has low power consumption (500A per buffer). These features make the EL5421C ideal for a wide range of general-purpose applications. When driving a load of 10k and 12pF, the EL5421C has a -3dB bandwidth of 12 MHz and exhibits 10V/S slew rate.
Short Circuit Current Limit
The EL5421C will limit the short circuit current to +/120mA if the output is directly shorted to the positive or the negative supply. If an output is shorted indefinitely, the power dissipation could easily increase such that the device may be damaged. Maximum reliability is maintained if the output continuous current never exceeds +/30 mA. This limit is set by the design of the internal metal interconnects.
Operating Voltage, Input, and Output
The EL5421C is specified with a single nominal supply voltage from 5V to 15V or a split supply with its total range from 5V to 15V. Correct operation is guaranteed for a supply range of 4.5V to 16.5V. Most EL5421C specifications are stable over both the full supply range and operating temperatures of -40 C to +85 C. Parame t e r v a ri a t i o n s w i t h o p e ra ti n g v o l t a g e a n d / o r temperature are shown in the typical performance curves. The output swings of the EL5421C typically extend to within 80mV of positive and negative supply rails with load currents of 5mA. Decreasing load currents will extend the output voltage range even closer to the supply rails. Figure 1 shows the input and output waveforms for the device. Operation is from +/-5V supply with a 10k load connected to GND. The input is a 10Vp-p sinusoid. The output voltage is approximately 9.985 VP-P.
5V 10 S
Output Phase Reversal
The EL5421C is immune to phase reversal as long as the input voltage is limited from VS- - 0.5V to VS+ +0.5V. Figure 2 shows a photo of the output of the device with the input voltage driven beyond the supply rails. Although the device's output will not change phase, the input's overvoltage should be avoided. If an input voltage exceeds supply voltage by more than 0.6V, electrostatic protection diodes placed in the input stage of the device begin to conduct and overvoltage damage could occur.
1V
10 S
VS=2.5V TA=25C VIN=6VP-P
1V VS=5V TA=25C VIN=10VP-P
Input
Output
Figure 2. Operation with Beyond-the-Rails Input Power Dissipation
With the high-output drive capability of the EL5421C buffer, it is possible to exceed the 125C 'absolute-maximum junction temperature' under certain load current conditions. Therefore, it is important to calculate the
10
5V
Figure 1. Operation with Rail-to-Rail Input and Output
EL5421C
EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
maximum junction temperature for the application to determine if load conditions need to be modified for the buffer to remain in the safe operating area. The maximum power dissipation allowed in a package is determined according to:
T JMAX - T AMAX P DMAX = -------------------------------------------- JA
equation, it is a simple matter to see if PDMAX exceeds the device's power derating curves. To ensure proper operation, it is important to observe the recommended derating curves shown in Figure 3 and Figure 4.
MSOP10 Package Mounted on JEDEC JESD51-7 High Effective Thermal Conductivity Test Board 1200 1000 870mW Power Dissipation (mW) 800 600 400 200 0 0 25 50 75 85 100 125 150 Ambient Temperature (C) MAX TJ=125C
where: TJMAX = Maximum Junction Temperature TAMAX= Maximum Ambient Temperature JA = Thermal Resistance of the Package PDMAX = Maximum Power Dissipation in the Package The maximum power dissipation actually produced by an IC is the total quiescent supply current times the total power supply voltage, plus the power in the IC due to the loads, or:
P DMAX = i [ V S x I SMA X + ( V S + - VOUT i ) x I LOAD i ]
MS
OP 10 ---
JA =
11 5 C
/W
Figure 3. Package Power Dissipation vs Ambient Temperature
when sourcing, and:
600
MSOP10 Package Mounted on JEDEC JESD51-3 Low Effective Thermal Conductivity Test Board
P DMA X = i [ V S x I SM AX + ( V OU T i - V S - ) x I LOAD i ]
Power Dissipation (mW)
500 400 300 200 100 0 0
485mW
MS OP 10 --
MAX TJ=125C
when sinking. Where: i = 1 to 4 for Quad VS = Total Supply Voltage ISMAX = Maximum Supply Current Per Channel VOUTi = Maximum Output Voltage of the Application ILOADi = Load current If we set the two PDMAX equations equal to each other, we can solve for RLOADi to avoid device overheat. Figure 3 and Figure 4 provide a convenient way to see if the device will overheat. The maximum safe power dissipation can be found graphically, based on the package type and the ambient temperature. By using the previous
11
-
JA =
20 6
C/
W
25
50
75 85
100
125
150
Ambient Temperature (C)
Figure 4. Package Power Dissipation vs Ambient Temperature Unused Buffers
It is recommended that any unused buffer have the input tied to the ground plane.
EL5421C
EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
Driving Capacitive Loads
The EL5421C can drive a wide range of capacitive loads. As load capacitance increases, however, the -3dB bandwidth of the device will decrease and the peaking increase. The buffers drive 10pF loads in parallel with 10 k with just 1.5dB of peaking, and 100pF with 6.4dB of peaking. If less peaking is desired in these applications, a small series resistor (usually between 5 and 50 ) can be placed in series with the output. However, this will obviously reduce the gain slightly. Another method of reducing peaking is to add a "snubber" circuit at the output. A snubber is a shunt load consisting of a resistor in series with a capacitor. Values of 150 and 10nF are typical. The advantage of a snubber is that it does not draw any DC load current or reduce the gain
Power Supply Bypassing and Printed Circuit Board Layout
The EL5421C can provide gain at high frequency. As with any high-frequency device, good printed circuit board layout is necessary for optimum performance. Ground plane construction is highly recommended, lead lengths should be as short as possible and the power supply pins must be well bypassed to reduce the risk of oscillation. For normal single supply operation, where the VS- pin is connected to ground, a 0.1 F ceramic capacitor should be placed from VS+ to pin to VS- pin. A 4.7F tantalum capacitor should then be connected in parallel, placed in the region of the buffer. One 4.7F capacitor may be used for multiple devices. This same capacitor combination should be placed at each supply pin to ground if split supplies are to be used.
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EL5421C
EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
General Disclaimer
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement.
WARNING - Life Support Policy
Elantec, Inc. products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec, Inc. Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. Products in Life Support Systems are requested to contact Elantec, Inc. factory headquarters to establish suitable terms & conditions for these applications. Elantec, Inc.'s warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages.
October 2, 2000
Elantec Semiconductor, Inc.
675 Trade Zone Blvd. Milpitas, CA 95035 Telephone: (408) 945-1323 (888) ELANTEC Fax: (408) 945-9305 European Office: +44-118-977-6080 Japan Technical Center: +81-45-682-5820
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Printed in U.S.A.

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